| PART |
Description |
Maker |
| 5962-0420401HPC 5962-0420401HYC 5962-0420401HYA HC |
2.0 Amp Output Current IGBT Gate Drive Optocoupler 2.0安培输出电流IGBT栅极驱动光电耦合
5962-0420401HPC · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HYA · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HYC · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HPA · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HXA · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121-300 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121-200 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120-300 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121-100 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120-100 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120-200 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
|
Ecliptek, Corp.
HIROSE ELECTRIC Co., Ltd.
DB Lectro, Inc.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| DIM200PHM33-F000 |
Half Bridge IGBT Module 200 A, 3300 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
Dynex Semiconductor, Ltd.
|
| DIM200PKM33-F000 |
IGBT Chopper Module 200 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| IXGX120N60B IXGK120N60B |
HiPerFAST IGBT 200 A, 600 V, N-CHANNEL IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT
300 A, 1200 V, N-CHANNEL IGBT
100 A, 1000 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
75 A, 1000 V, N-CHANNEL IGBT
200 A, 1000 V, N-CHANNEL IGBT
50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| FQD18N20V2TM FQD18N20V2TF |
200V N-Channel Advanced QFET V2 series; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 15 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| CQ220-16 CQ220-16B CQ220-16D CQ220-16M CQ220-16N |
Leaded Thyristor TRIAC
16 AMP TRIAC 200 THRU 800 VOLTS 800 V, 16 A, TRIAC, TO-220AB
16 AMP TRIAC 200 THRU 800 VOLTS 400 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
16 AMP TRIAC 200 THRU 800 VOLTS 600 V, 16 A, TRIAC, TO-220AB
16 AMP TRIAC 200 THRU 800 VOLTS 200 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
16 AMP TRIAC 200 THRU 800 VOLTS 16安培可控00 7860 800伏特
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SFF9240J |
-11 AMP -200 VOLTS 0.50 ohm P-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SFF9240-28 |
-11 AMP -200 VOLTS 0.50 ohm P-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SFF250-61 SFF250_61 |
30 AMP 200 Volts 0.085OHM N-Channel POWER MOSFET
|
Solid States Devices, Inc
|
| SFF9240Z SFF9240M |
-11 AMP -200 VOLTS 0.50 ohm P-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
